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SUB75P03-07, SUP75P03-07
Vishay Siliconix
P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( ? )
0.007 at V GS = - 10 V
0.010 at V GS = - 4.5 V
I D (A)
± 75
± 75
a
? Compliant to RoHS Directive 2002/95/EC
A v aila b le
RoHS*
COMPLIANT
TO-220AB
TO-263
S
G
D S
DRAIN connected to TAB
Top View
SUB75P03-07
G D S
Top View
SUP75P03-07
Ordering Information: SUB75P03-07 (TO-263)
SUB75P03-07-E3 (TO-263, Lead (Pb)-free)
SUP75P03-07 (TO-220AB)
SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
G
D
P-Channel MOSFET
Parameter
Gate-Source Voltage
Symbol
V GS
Limit
± 20
Unit
V
Continuous Drain Current (T J = 175 °C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy b
Power Dissipation
T C = 25 °C
T C = 125 °C
L = 0.1 mH
T C = 25 °C (TO-220AB and TO-263)
T A = 25 °C (TO-263) c
I D
I DM
I AR
E AR
P D
- 75 a
- 65
- 240
- 60
180
187 d
3.75
A
mJ
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263) c
Free Air (TO-220AB)
R thJA
R thJC
40
62.5
0.8
°C/W
Notes:
a. Package limited.
b. Duty cycle ? 1 %.
c. When mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
www.vishay.com
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